RF JFET DC-6GHz 28V 25W Gain 13dB Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) CREE CGH40025F C34615S

ID: prim-ua_war-88d8e6ffac91abc3

Под санкциями — санкции ввели: Украина.

Тип: Продукция

Полное досье доступно по подписке.

1 запись о санкциях

Войти · Тарифы и подписка — Dazor Санкционная разведка: Проверка по санкционным спискам и реестрам.

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